Zero-bias anomaly in nanoscale hole-doped Mott insulators on a triangular silicon surface
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2018
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.97.075403